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Diffuse |
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UR-10P-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-10P-M8
Output method:PNP
Sensing distance:100mm
Connection method:M8 Connector
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Diffuse |
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UR-30N-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-30N-M8
Output method:NPN
Sensing distance:300mm
Connection method:M8 Connector
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Diffuse |
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UR-30P-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-30P-M8
Output method:PNP
Sensing distance:300mm
Connection method:M8 Connector
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Diffuse |
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UR-10N-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-10N-PG
Output method:NPN
Sensing distance:100mm
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Diffuse |
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UR-10P-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-10P-PG
Output method:PNP
Sensing distance:100mm
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Diffuse |
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UR-30N-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-30N-PG
Output method:NPN
Sensing distance:300mm
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Diffuse |
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UR-30P-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Diffuse
Model：UR-30P-PG
Output method:PNP
Sensing distance:300mm
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-3MNE Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-3MNE
Output method:NPN
Sensing distance:3.0m
Connection method: Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-3MPE Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-3MPE
Output method:PNP
Sensing distance:3.0m
Connection method: Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-6MN Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-6MN
Output method:NPN
Sensing distance:6.0m
Connection method: Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-6MP Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-6MP
Output method:PNP
Sensing distance:6.0m
Connection method: Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-3MNE-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-3MNE-M8
Output method:NPN
Sensing distance:3.0m
Connection method: M8 Connector
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-3MPE-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-3MPE-M8
Output method:PNP
Sensing distance:3.0m
Connection method: M8 Connector
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-6MN-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-6MN-M8
Output method:NPN
Sensing distance:6.0m
Connection method: M8 Connector
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-6MN-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-6MN-M8
Output method:PNP
Sensing distance:6.0m
Connection method: M8 Connector
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-6MN-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-6MN-PG
Output method:NPN
Sensing distance:6.0m
Connection method: M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-6MP-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-6MP-PG
Output method:PNP
Sensing distance:6.0m
Connection method: M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-3MNE-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-3MNE-PG
Output method:NPN
Sensing distance:3.0m
Connection method: M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Retro-reflective |
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UG-3MPE-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Retro-reflective
Model：UG-3MPE-PG
Output method:PNP
Sensing distance:3.0m
Connection method: M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-6MN Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-6MN
Output method:NPN
Sensing distance:6.0m
Connection method: Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-6MP Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-6MP
Output method:PNP
Sensing distance:6.0m
Connection method: Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-20MN Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-20MN
Output method:NPN
Sensing distance:20.0m
Connection method: Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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|
UT-20MP Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-20MP
Output method:PNP
Sensing distance:20.0m
Connection method: Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
|
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UT-6MN-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-6MN-M8
Output method:NPN
Sensing distance:6.0m
Connection method: M8 Connector
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
|
Thru-beam |
|
|
UT-6MP-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-6MP-M8
Output method:PNP
Sensing distance:6.0m
Connection method: M8 Connector
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
|
|
UT-20MN-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-20MN-M8
Output method:NPN
Sensing distance:20.0m
Connection method: M8 Connector
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-20MP-M8 Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-20MP-M8
Output method:PNP
Sensing distance:20.0m
Connection method: M8 Connector
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-6MN-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-6MN-PG
Output method:NPN
Sensing distance:6.0m
Connection method: M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-6MP-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-6MP-PG
Output method:PNP
Sensing distance:6.0m
Connection method: M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-20MN-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-20MN-PG
Output method:NPN
Sensing distance:20.0m
Connection method: M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
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Thru-beam |
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UT-20MP-PG Photo Sensor
HELP_FILE： NO FILE
Discription：Thru-beam
Model：UT-20MP-PG
Output method:PNP
Sensing distance:20.0m
Connection method: M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/UL/RoHS |
