Compact Standard Photo-Electric Sensor 

 

Diffuse
K2R-10NE Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10NE
Output method:NPN
Sensing distance:150mm
Connection method:Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10PE Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10PE
Output method:PNP
Sensing distance:150mm
Connection method:Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10N Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10N
Output method:NPN
Sensing distance:150mm
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10P Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10P
Output method:PNP
Sensing distance:150mm
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-30N Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-30N
Output method:NPN
Sensing distance:400mm
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-30P Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-30P
Output method:PNP
Sensing distance:400mm
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10NE-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10NE-PG
Output method:NPN
Sensing distance:150mm
Connection method:M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10PE-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10PE-PG
Output method:PNP
Sensing distance:150mm
Connection method:M8Lead wire
Emitter LED:Red LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10N-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10N-PG
Output method:NPN
Sensing distance:150mm
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-10P-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-10P-PG
Output method:PNP
Sensing distance:150mm
Connection method:M8Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-30N-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-30N-PG
Output method:NPN
Sensing distance:400mm
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Diffuse
K2R-30P-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Diffuse
Model:K2R-30P-PG
Output method:PNP
Sensing distance:400mm
Connection method:M8Lead wire
Emitter LED:Infrared LED
Sensing adjuster:270°Trimmer
Response time:1ms
Operating Voltage10~30Vdc
Operating current:30mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-2MNE Photo Sensor (With Polarized Filter)
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-2MNE
Output method:NPN
Sensing distance:2.0m
Connection method:Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-2MPE Photo Sensor (With Polarized Filter)
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-2MPE
Output method:PNP
Sensing distance:2.0m
Connection method:Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-3MN Photo Sensor
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-3MN
Output method:NPN
Sensing distance:3.0m
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-3MP Photo Sensor
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-3MP
Output method:PNP
Sensing distance:3.0m
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-2MNE-PG Photo Sensor (With Polarized Filter)
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-2MNE-PG
Output method:NPN
Sensing distance:2.0m
Connection method:M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-2MPE-PG Photo Sensor (With Polarized Filter)
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-2MPE-PG
Output method:PNP
Sensing distance:2.0m
Connection method:M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-3MN-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-3MN-PG
Output method:NPN
Sensing distance:3.0m
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2G-3MP-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Retro-Reflective
Model:K2G-3MP-PG
Output method:PNP
Sensing distance:3.0m
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:1ms
Operating Voltage10~30Vdc
Operating current:25mA Max.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Thru-Beam
K2T-4MN Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-4MN
Output method:NPN
Sensing distance:4.0m
Connection method:Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2T-4MP Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-4MP
Output method:PNP
Sensing distance:4.0m
Connection method:Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Thru-Beam
K2T-15MN Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-15MN
Output method:NPN
Sensing distance:15.0m
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2T-15MP Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-15MP
Output method:PNP
Sensing distance:15.0m
Connection method:Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Thru-Beam
K2T-4MN-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-4MN-PG
Output method:NPN
Sensing distance:4.0m
Connection method:M8 Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2T-4MP-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-4MP-PG
Output method:PNP
Sensing distance:4.0m
Connection method:M8Lead wire
Emitter LED:Red LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Thru-Beam
K2T-15MN-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-15MN-PG
Output method:NPN
Sensing distance:15.0m
Connection method:M8 Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS
Retro-Reflective
K2T-15MP-PG Photo Sensor
HELP_FILE: NO FILE
Discription:Thru-Beam
Model:K2T-15MP-PG
Output method:PNP
Sensing distance:15.0m
Connection method:M8Lead wire
Emitter LED:Infrared LED
Sensing adjuster:Non
Response time:2ms
Operating Voltage10~30Vdc
Operating current:Emitter<20mA Receiver<20mA.
Ripple of power:20%peak to peak
Output method:NPN & PNP
Output status:LightON/Dark ON changeable
Output current:150mA max.
Resifual voltage:0.1V max.
 
Leakage current:0.8mA max.
Protection circuit:Short circuit&polarity reversed protection
Housing material:IntensivePBT;Lenz:PMMA
Illumination:Lamp light<10000Lux;sunlight<20000Lux
Noise resistance:2kv/1μs
Dielectric strength:100MΩ/500vdc
Operating circumstance:-25℃~+80℃;35%~85%RH
Protection class:IP-66
Approval:CE/RoHS